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PRODUCT INFORMATION

High-efficiency CMP Slurry

GRlSH high-efficiency CMP polishing slurry has aracidic pH value. During use, it is more stable and will not change significantly, maintaining a high andstable polishing rate. This product combines roughand fine polishing into a single process, greatly reducing processing costs and improving processingefficiency.

Technical specifications

Manufacturer / publisherGRISH / Beijing Grish Hitech
Brand / publisherGRISH
Content typeproducts
LanguageEnglish
CategoryCompounds & slurries
Updated2026-10-16
GRISH published content
Source: https://grish.com/product/high-efficiency-cmp-slurry/ · Original publication: 2025-01-21. Manufacturer claims and terminology are reproduced as source material.Explore Products & equipment ↗
Polishing Slurry

High-efficiency CMP Slurry

GRlSH high-efficiency CMP polishing slurry has aracidic pH value. During use, it is more stable and will not change significantly, maintaining a high andstable polishing rate. This product combines roughand fine polishing into a single process, greatly reducing processing costs and improving processingefficiency.
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Take a Closer Look

The acidic pH value is stable, maintaininga high and stable polishing rate.
Combines rough and fine polishing into a single process, greatly reducing process-ing costs and improving processingefficiency.

High efficiency CMP Slurry

Test data

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Microscope Photo

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Semi-insulated 500X

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Conductive 500X

Test Conditions and Parameter Settings

High efficiency CMP Slurry
  • Polishing object: 6-inch SiC substrate*3 pcs*2 Head
  • Polishing pad: Suba 600
  • Polishing slurry: SC-O80K (Grish)
  • Pasting method: wax paste
  • Pressure: 120Kg (220g/cm²)
  • Speed: lower 66rpm, upper 60rpm
  • Circulation barrel: 10L
  • Chiller temperature: 20℃
  • Polishing time: 4H

Conclusion

The total time of traditional rough polishing and fine polishing is 6-9 hours, and high-efficiency CMP can be used for 2-3 hours to meet polishing requirements.
After polishing with high-efficiency CMP, the Ra values that can be achieved on the carbon and silicon surfaces of silicon carbide are: Si: 0.115nm C: 0.127nm.

Specifications

  • Specifications
    Parameters Content Testing Instrument
    Grit Size (nm) 70-90 Laser particle analyzer
    Particle Appearance Spherical SEM/TEM
    pH 3-4 pH meter
    Viscosity(cst) <10 Viscometer
    Consentration (%) 5-10% Hydrometer
    Package 25kg/5kg -
    Remark: Customizations are available upon requests. - -

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